features absolute ratings power dissipation on printed t a =50 o c circuit (l=10m m ) pc mw repetitive peak on-state tp=20 s current f=120hz i trm a operating junction temperature t j o c storage temperature t stg o c mi n 2 8 3 5 typ 32 40 ma x 3 6 4 5 output voltage (note 1) v o mi n v breakover current (note 1) i bo ma x a rise time (note 1) t r typ s leakage current (note 1) i r ma x a 2.connected in parallel w ith the devices note: 1.electrical characteristics applicable in both forw ard and reverse dirctions. 5.0 5.0 100.0 1.5 v r =0.5 v bo see fig.1 10.0 c=22nf (note 2) breakover voltage (note 1) breakover voltage symmetry dynamic breakover voltage (note 1) v bo units 150.0 i+v bo i- i-v bo i i vi c=22nf (note 2) see fig.1 i=(i bo to i f =10ma) see fig.1 v v 3.0 v parameters symbols units db3,DB4 db3.DB4 voltage range: 28-45 v silicon bidirectional diacs do-35(gl ass) the three layer,two termnal,axial lead,hermetically 1111 sealed diacs are designed specifically for triggering 1111 thyris tors .they dem ons trate low breakover current at 1111 breakover voltage as they withstand peak pulse 1111 current,the breakover s ym m etry is within three 1111 volts(db3,DB4). these diacs are intended for use in ccc thyris itors phas e control,circuits for lam p dim m ing, fffi universal motor speed control,and heat control. galaxy electrical parameters see fig.3 2.0 -40--- +125 c=22nf (note 2) see fig.1 electrical characteristics test conditions -40--- +125 db3 DB4 see fig.2 ma x mi n www.galaxycn.com bl galaxy electrical bl document number 0283003 1. dimensions in millimeters
1.04 25 1.00 50 1.02 1.06 1.08 100 75 125 vbo(t j ) vbo(t j =25 ) t j ( ) bl galaxy electrical document number 0283003 2. 10k|? 500k|? d.u.t 220v 60hz 0.1m f v o r=20|? 90% 10% i p tr f=100hz t j initial=25?? i trm (a) 10 100 10000 1000 0.01 0.1 1 2 tp(m s) www.galaxycn.com fig.6--peak pulsee current verent versus pulse duration(maximum values) ratings and characteristic curves db3.DB4 fig.1--voltage-current characteristic curve fig.2--test circuit for output voltage fig.3-- test circuit see fig.2 adjust r for ip=0.5a fig.4--power dissipation versus ambient temperature (maximum values) fig.5--relative variation of vbo versus junction temperature(typical values) +i f -i f -v +v 10ma i bo i b 0.5v bo v v bo 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 20 40 60 80 100 120 140 160 p(mw) tamb( ?? )
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